2021

 

1. "Photoelectrochemical etching of ultra-wide bandgap β-Ga2O3 semiconductor in phosphoric acid and its optoelectronic device application", Yongha Choi, Kwanghyeon Baek, Suhyun Kim, and Jihyun Kim, Applied Surface Science, 539, 148130 (2021)

2. "Assessment of the (010) β-Ga2O3 surface and substrate specification", Michael A. Mastro, Charles R. Eddy, Marko J. Tadjer, Jennifer K. Hite, Jihyun Kim, and Stephene J. Pearton, Journal of Vacuum Science & Technology A, 39, 013408 (2021)

3. "Selective p-Doping of 2D WSe2 via V/Ozone Treatments and Its Application in Field-Effect Transistors", Sujeong Yang, Geonyeop Lee, and Jihyun Kim, ACS Applied Materials and Interfaces (2021)

4. "Artificial neuron and synapse devices based on two-dimensional materials", Geonyeop Lee, Ji-Hwan Baek, Fan Ren, Stephen J. Pearton, Gwan-Hyoung Lee, Jihyun Kim, Small (2021)

5. "Large-scale synthesis of atomically thin ultrawide bandgap β-Ga2O3 using a liquid gallium squeezing technique", Hyunik Park, Yongha Choi, Sujung Yang, Jinho Bae, and Jihyun Kim, Journal of Vacuum Science & Technology A (2021)

 

6. "High responsivity solar-blind metal-semiconductor-metal photodetector based on α-Ga2O3", Jinho Bae, Dae-Woo Jeon, Ji-Hyeon Park, and Jihyun Kim, Journal of Vacuum Science & Technology A (2021)
 

7. "Radiation Damage in Wide and Ultra-Wide Bandgap Semiconductors", S. J. Pearton, Assel Aitkaliyeva, Minghan Xian, Fan Ren, Ani Khachatrian, Adrian Ildefonso, Zahabul Islam, Md Abu Jafar Rasel, Aman Haque, A. Y. Polyakov, and Jihyun Kim, ECS Journal of Solid State Science and Technology, 10, 055008 (2021)

8. "Effects of Downstream Plasma Exposure on β-Ga2O3 Rectifiers", Xinyi Xia, Minghan Xian, Chaker Fares, Fan Ren, Junghun Kim, Jihyun Kim, Marko Tadjer, and Stephen J. Pearton, ECS Journal of Solid State Science and Technology, 10, 065005 (2021)

9. "Defect-engineered n-doping of WSe2 via argon plasma treatment and its application in field-effect transistors", Junghun Kim, Hyunik Park, SangHyuk Yoo, Keonwook Kang, Yeon-Ho Im and Jihyun Kim, Advanced Materials Interfaces (2021)

10. "Design of Ga2O3 modulation doped field effect transistors", Michael A. Mastro, Marko J. Tadjer, Jihyun Kim, Fan Ren, and Stephen J. Pearton, Journal of Vacuum Science & Technology A, 39, 023412 (2021)

11. "Electrical properties and deep trap spectra in Ga2O3 films grown by halide vapor phase epitaxy on p-type diamond substrates", Alexander Y. Polyakov, Vladimir I. Nikolaev, Sergey A. Tarelkin, Alexei I. Pechnikov, Sergey I. Stepanov, Andrey E. Nikolaev, Ivan V. Shchemerov, Eugene B. Yakimov, Nikolay V. Luparev, Mikhail S. Kuznetsov, Anton A. Vasilev, Anastasiya I. Kochkova, Marina I. Voronova, Mikhail P. Scheglov, Jihyun Kim, and Stephen J. Pearton, J. Appl. Phys. 129, 185701 (2021)

12. "Achieving over 15% Efficiency in Solution-Processed Cu(In,Ga)(S,Se)2 Thin-Film Solar Cells via a Heterogeneous-Formation-Induced Benign p−n Junction Interface", Da-Seul Kim, Gi Soon Park, Byungwoo Kim, Soohyun Bae, Sang Yeun Park, Hyung-Suk Oh, Ung Lee, Doo-Hyun Ko, Jihyun Kim, and Byoung Koun Min, ACS Applied Materials and Interfaces (2021)

13. "Capacitive β-Ga2O3 solar-blind photodetector with graphene electrode", Ayeong Kim, Geonyeop Lee, and Jihyun Kim, Journal of Vacuum Science & Technology A, 39, 053412 (2021)

14. "Self-powered solar-blind α-Ga2O3 thin-film UV-C photodiode grown by halide vapor-phase epitaxy", Jinho Bae, Ji-Hyeon Park, Dae-Woo Jeon, and Jihyun Kim, APL Materials, 9(10), 101108 (2021) (Editor's Pick)

2020

 

1. "Monolithically integrated enhancement-mode and depletion-mode β-Ga2O3 MESFETs with graphene gate architectures and their logic applications", Janghyuk Kim, and Jihyun Kim, ACS Applied Materials & Interfaces, 12(6), 7310 (2020) (Supplementary Cover)

2. "Selective electrochemical etching of epitaxial aluminum nitride thin film", Yongha Choi, Rakjun Choi, and Jihyun Kim, Applied Surface Science, 509, 145279 (2020)

3. "Dual-field plated β-Ga2O3 nano-FETs with an off-state breakdown voltage exceeding 400 V", Jinho Bae, Hyeong Woo Kim, In Ho Kang, and Jihyun Kim, Journal of Materials Chemistry C, 8, 2687-2692 (2020)

4. "Programmable synapse-like MoS2 field-effect transistors phase-engineered by dynamic lithium ion modulation", Hyunik Park and Jihyun Kim, Advanced Electronic Materials, 6, 1901410 (2020)

5. "Ultrawide-bandgap p-n heterojunction of diamond/β-Ga2O3 for a solar-blind photodiode", Hyun Kim, Sergey Tarelkin, Alexander Polyakov, Sergey Troschiev, Sergey Nosukhin, Mikhail Kuznetsov and Jihyun Kim, ECS Journal of Solid State Science and Technology, 9, 045004 (2020)

6. "BEOL-compatible synthesis of multi-layer graphene by carbon ion implantation on cobalt thin films", Janghyuk Kim, Dong Ryul Lee, Hong-Yeol Kim, Jihyun Kim, Applied Surface Science, 524, 146537 (2020) 
 

7. "Ambipolar Charge Transport in Two-Dimensional WS2 Metal–Insulator–Semiconductor and Metal–Insulator–Semiconductor Field-Effect Transistors", Geonyeop Lee, Sooyeoun Oh, Janghyuk Kim and Jihyun Kim, ACS Applied Materials & Interfaces, 12, 23127-23133 (2020) 

8. "In-plane WSe2 p-n homojunction two-dimensional diode by laser-induced doping", Sujeong Yang,   Geonyeop Lee,   Janghyuk Kim,   Seunghoon Yang,   Chul-Ho Lee  and  Jihyun Kim, Journal of Materials Chemistry C, 8, 8393 (2020)

9. "Ultra-Wide Bandgap β-Ga2O3 Heterojunction Field-Effect Transistor Using p-Type 4H-SiC Gate for Efficient Thermal Management", Dongryul Lee, Hyoung Woo Kim, Janghyuk Kim, Jeong Hyun Moon, Geonyeop Lee, and Jihyun Kim, ECS Journal of Solid State Science and Technology, 9, 065006 (2020)

10. "Capacitive Chemical Sensors Based on Two-Dimensional WSe2", Ayeong Kim, Geonyeop Lee, Suhyun Kim, and Jihyun Kim, ECS Journal of Solid State Science and Technology, 9, 115020 (2020)

11. "Highly Selective Ozone-Treated β-Ga2O3 Solar-Blind Deep-UV Photodetectors", Suhyun Kim and Jihyun Kim, Applied Physics Letters, 117, 261101 (2020)

12. "Proton Irradiation of High Aluminum Content AlGaN Polarization Doped Field Effect Transistors", Patrick H. Carey IV, Fan Ren, Jinho Bae, Jihyun Kim, and Stephen J. Pearton, ECS Journal of Solid State Science and Technology, 9, 025003 (2020)

13. "Alpha Particle Irradiation of High Aluminum Content AlGaN Polarization Doped Field Effect Transistors", Patrick H. Carey IV, Fan Ren, Jinho Bae, Jihyun Kim, and Stephen J. Pearton, ECS Journal of Solid State Science and Technology, 9, 035008 (2020)

2019

 

1. "Radiation Damage Effects in Ga2O3 Materials and Devices", Jihyun Kim, Stephen J. Pearton, Chaker Fares, Jiancheng Yang, Fan Ren, Suhyun Kim, and Alexander Y. Polyakov, Journal of Materials Chemistry C, 7, 10 (2019)

 

2. "Defect States Determining Dynamic Trapping-Detrapping in β-Ga2O3 Field-Effect Transistors" Alexander Y. Polyakov, Nikolai B. Smirnov, Ivan V. Shchemerov, Sergey V. Chernykh, Sooyeoun Oh, Stephen J. Pearton, Fan Ren, Anastasia Kochkova, and Jihyun Kim, ECS Journal of Solid State Science and Technology, 7(7), Q1 (2019)

 

3. "60Co Gamma Ray Damage in Homoepitaxial β-Ga2O3 Schottky Rectifiers", Jiancheng Yang, Gregory J. Koller, Chaker Fares, F. Ren, S. J. Pearton, Jinho Bae, Jihyun Kim, and David J. Smith, ECS Journal of Solid State Science and Technology, 8(7), Q3041 (2019)

 

4. "Two-dimensional material based vertical double heterojunction bipolar transistors with high current amplification" Geonyeop Lee, S. J. Pearton, Fan Ren and Jihyun Kim, Advanced Electronic Materials 5(3), 1800745 (2019)

 

5. "Ultrahigh Deep-UV sensitivity in Graphene-Gated β-Ga2O3 Phototransistors", Suhyun Kim, Sooyeoun Oh, Jihyun Kim, ACS Photonics, 6(4), 1026 (2019)

 

6. "Electrical Properties of Thermally Annealed β-Ga2O3 Metal-Semiconductor Field-Effect Transistors with Pt/Au Schottky Contacts", Suhyun Kim and Jihyun Kim, ECS Journal of Solid State Science and Technology, 8(7), Q3122 (2019)

7. "Photo-Enhanced Acid Chemical Etching of High-Quality Aluminum Nitride Grown by Metal-Organic Chemical Vapor Deposition", Yong ha Choi, Kwang Hyeon Baik, Rakjin Choi, Joengtak Oh, and Jihyun Kim, ECS Journal of Solid State Science and Technology, 8(3), N42 (2019)

8. "Field-plate engineering for high breakdown voltage β-Ga2O3 nanolayer field-effect transistors", Jinho Bae, Hyoung Woo Kim, In Ho Kang, and Jihyun Kim, RSC advances, 9, 9678 (2019)

9. "Will Surface Effects Dominate in Quasi Two Dimensional Gallium Oxide for Electronic and Photonic Devices?", Jihyun Kim, F. Ren and S. J. Pearton, Nanoscale Horizons, 4, 1251 (2019)

10. "High-energy Proton Irradiation Damage on Two-dimensional Hexagonal Boron Nitride", Dongryul Lee, Sanghyuk Yoo, Jinho Bae, Hyunik Park, Keonwook Kang, and Jihyun Kim, RSC advances, 9, 18326 (2019)

11. "Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment", Janghyuk Kim, Marko Tadjer, Michael A. Mastro, and Jihyun Kim, Journal of Materials Chemistry C, 7, 8855 (2019) (Inside front cover)

12. "Intimate ohmic contact to two-dimensional WSe2 via thermal alloying", Hyun Kim, Hyunik Park, Geonyeop Lee, and Jihyun Kim, Nanotechnology, 30, 415302 (2019)

13. "All-2D ReS2 transistors with split gates for logic circuitry", Junyoung Kwon, Yongjun Shin, Hyeokjae Kwon, Jae Yoon Lee, Hyunik Park, Kenji Watanabe, Takashi Taniguchi, Jihyun Kim, Chul-Ho Lee, Seongil Im, and Gwan-Hyoung Lee , Scientific Report, 9:10354 (2019)

14. "Programmable multi-level memtransistors based on van der Waals heterostructures", Hyunik Park, Michael A. Mastro, Marko J. Tadjer, and Jihyun Kim, Advanced Electronic Materials, 1900333 (2019) (Inside front cover)

15. "Auto-Masked Surface Texturing of Kerf-Loss Free Silicon Wafers Using Hexafluoroisopropanol in a Capacitively Coupled Plasma Etching System", Suhyun Kim, Jin-Su Park, Jun-Hyun Kim, Chang-Koo Kim, and Jihyun Kim, ECS Journal of Solid State Science and Technology, 8(4), Q76 (2019)

16. "Nafion membranes with a sulfonated organic additive for the use in vanadium redox flow batteries", Yona Lee, Sangwon Kim, Rolf Hempelmann, Jong Hyun Jang, Hyoung-Juhn Kim, Jonghee Han, Jihyun Kim, Dirk Henkensmeier, Journal of Applied Polymer Science, 136(21), 47547 (2019)

2018

 

1. "Bifacial CdS/CdTe thin-film solar cells using a transparent silver nanowire/indium tin oxide back contact", Yongbeom Kwon, Jaeyoung Seo, Yoonmook Kang, Donghwan Kim, and Jihyun Kim, Optics Express, 26(2), A30 (2018)

 

2. "High responsivity β-Ga2O3 metal-semiconductor-metal solar-blind photodetectors with ultra-violet transparent graphene electrodes", Sooyeoun Oh, Chang-Koo Kim, and Jihyun Kim, ACS Photonics, 5, 1123 (2018)

 

3. "Reducing the contact and channel resistances of black phosphorus via low-temperature vacuum annealing", Hyunik Park, Jongha Son, and Jihyun Kim, Journal of Materials Chemistry C, 6, 1567 (2018)

 

4. "A review of Ga2O3 materials, processing, and devices", S. J. Pearton, Jiancheng Yang, Patrick H. Cary IV, F. Ren, Jihyun Kim, Marko J. Tadjer, and Michael A. Mastro, Applied Physics Review, 5, 011301 (2018)

 

5. "Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage", A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, E. B. Yakimov, Jiancheng Yang, F. Ren, Gwangseok Yang, Jihyun Kim, A. Kuramata, and S. J. Pearton, Applied Physics Letters, 112, 032107 (2018)

 

6. "Two-dimensionally layered p-black phosphorus/n-MoS2/p-black phosphorus Heterojunctions", Geonyeop Lee, Stephen J. Pearton, Fan Ren and Jihyun Kim, ACS Applied Materials and Interfaces, 10 (12), 10347 (2018)

 

7. "High breakdown voltage quasi-two-dimensional β-Ga2O3 field-effect transistors with a boron nitride field plate", Jinho Bae, Hyoung Woo Kim, In Ho Kang, Gwangseok Yang, and Jihyun Kim, Applied Physics Letters, 112, 12210 (2018)

 

8. "Chemical doping effects of gas molecules on black phosphorus field-effect transistors", Suhyun Kim, Geonyeop Lee and Jihyun Kim, ECS Journal of Solid State Science and Technology, 7 (7), Q3065 (2018)

 

9. "Study on the formation of Graphene by Ion Implantation on Cu, Ni and CuNi alloy", Janghyuk Kim, Hong-Yeol Kim,  Jeong Heum Jeon, Sungjoo An, Jongwon Hong and Jihyun Kim, Applied Surface Science, 451 (1), 162 (2018)

 

10. "Eighteen mega-electron-volt alpha-particle damage in homoepitaxial β-Ga2O3 Schottky rectifiers", Jiancheng Yang, Chaker Fares, Yu Guan, F. Ren, S. J. Pearton, Jinho Bae, Jihyun Kim, and Akito Kuramata, Journal of Vacuum Science & Technology B, 36, 031205 (2018)

 

11. "Diffusion length of non-equilibrium minority charge carriers in β-Ga2O3 measured by electron beam induced current", E. B. Yakimov, A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, Jiancheng Yang, F. Ren, Gwangseok Yang, Jihyun Kim, and S. J. Pearton, Journal of Applied Physics, 123, 185704 (2018)

 

12. "Reducing the optical reflectance of kerf-loss free silicon wafers via auto-masked CF4/O2 plasma etch" Suhyun Kim, Jun-Hyun Kim, Jihyun Kim and Chang-Koo Kim, ECS Journal of Solid State Science and Technology, 7 (5), Q88 (2018)

 

13. "Enhancing ambipolar carrier transport of black phosphorus field-effect transistors with Ni-P alloy contacts", Hyunik Park and Jihyun Kim, Physical Chemistry Chemical Physics, 20, 22439 (2018) (Inside front cover)

 

14. "Tuning the Threshold Voltage of Exfoliated β-Ga2O3 Flake-Based Field-Effect Transistors by Photo-Enhanced H3PO4 Wet Etching", Jongha Son, Yongbeom Kwon, Janghyuk Kim and Jihyun Kim, ECS Journal of Solid State Science and Technology, 7(8), Q148 (2018)

 

15. "Heterostructure WSe2­–Ga2O3 junction field-effect transistor for low-dimensional high-power electronics", Janghyuk Kim, Michael A. Mastro, Marko J. Tadjer, and Jihyun Kim, ACS Applied Materials and Interfaces 10 (35), 29724 (2018)

 

16. "Bifacial CdS/CdTe thin-film solar cells with copper nanowires as a transparent back contact", Eunkyo Byun, Jaeyoung Seo, Donghwan Kim, and Jihyun Kim, Optics Express, 26(18), 23594 (2018)

 

17. "High Gain β-Ga2O3 Solar-Blind Schottky Barrier Photodiodes via Carrier Multiplication Process", Sooyeoun Oh, Hyoung Woo Kim, and Jihyun Kim,ECS Journal of Solid State Science and Technology,7(11), Q196 (2018) 

 

18. "Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS", S. J. Pearton, Fan Ren, Marko Tadjer, and Jihyun Kim, Journal of Applied Physics, 124, 220901 (2018)

2017

 

1. "Contacting Mechanically Exfoliated β-Ga2O3 Nanobelts for (Opto)electronic Device Applications", Jinho Bae, Hong-Yeol Kim, and Jihyun Kim, ECS Journal of Solid State Science and Technology 6, Q3045 (2017)

2. "Tuning the thickness of exfoliated quasi-two-dimensional β-Ga2O3 flakes by plasma etching", Yongbeom Kwon, Geonyeop Lee, Sooyeoun Oh, and Jihyun Kim, Applied Physics Letters 110, 131901 (2017)

3. "Opportunities and future directions for Ga2O3 ", Michael A. Mastro, Akito Kuramata, Jacob Calkins, Jihyun Kim, Fan Ren, and S. J. Pearton, ECS Journal of Solid State Science and Technology, 6 (5) P356-P359 (2017)

4. "Suspended black phosphorus nanosheet gas sensors ", Geonyeop Lee, Suhyun Kim, Sunwoo Jung, Soohwan Jang, Jihyun Kim, Sensors & Actuators: B. Chemical 250, P569-573 (2017)

5. "High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3", Jiancheng Yang, Shihyun Ahn, F. Ren, S. J. Pearton, Soohwan Jang, Jihyun Kim and A. Kuramata, Applied Physics Letters 110, 192101 (2017)

6. "Platinum-functionalized black phosphorus hydrogen sensors", Geonyeop Lee, Sunwoo Jung, Soohwan Jang, Jihyun Kim, Applied Physics Letters 110, 242103 (2017)

 

7. "Recovery of pristine surface of black phosphorus by water rinsing and its device application", Suhyun Kim, Jong-Young Lee, Chul-Ho Lee, Gwan-Hyoung Lee, and Jihyun Kim, ACS Applied Materials and Interfaces 9 (25), 21382-21389 (2017)

8. "Quasi-Two-Dimensional h‑BN/β-Ga2O3 Heterostructure Metal−Insulator−Semiconductor Field-Effect Transistor", Janghyuk Kim, Michael A. Mastro, Marko J. Tadjer, and Jihyun Kim, ACS Applied Materials and Interfaces 9 (25), 21322 (2017)

 

9. "1.5 MeV electron irradiation damage in β-Ga2O3 vertical rectifiers", Jiancheng Yang, Fan Ren, Stephen J. Pearton, Gwangseok Yang, Jihyun Kim, and Akito Kuramata, J. Vac. Sci. Technol. B, 35, 031208 (2017).

 

10. "Graphitization of self-assembled monolayers using patterned nickel-copper layers", Gwangseok Yang, Hong-Yeol Kim, and Jihyun Kim, Appl. Phys. Lett., 111, 043102 (2017).

11. "Solar-Blind Metal-Semiconductor-Metal Photodetectors Based on an Exfoliated β-Ga2O3 Micro-Flake", Sooyeoun Oh, Michael A. Mastro, Marko J. Tadjer and Jihyun Kim, ECS Journal of Solid State Science and Technology, 6(8), Q79-Q83 (2017)

 

12. "Influence of high-energy proton irradiation on β-Ga2O3 nanobelt field-effect transistors". Gwangseok Yang, Soohwan Jang, Fan Ren, Stephen J. Pearton, and Jihyun Kim, ACS Applied Materials and Interfaces 9, 40471-40476 (2017).

 

2016

 

1. "Defect-engineered graphene chemical sensors with ultrahigh sensitivity", Geonyeop Lee, Gwangseok Yang, Ara Cho, Jeong Woo Han and Jihyun Kim, Phys. Chem. Chem. Phys 18 14198-14204 (2016)

 

2. "Photosensitive cadmium telluride thin-film field-effect transistors", Gwangseok Yang, Donghwan Kim, and Jihyun Kim, Optics Express 24(4) 3607 (2016).

 

3. "Electrical and optical damage to GaN-based light-emitting diodes b 20-MeV proton irradiation", Gwangseok Yang, Younghun Jung, Byung-Jae Kim, and Jihyun Kim, Science of Advanced Materials 8, 160-163 (2016).


4. "Post-growth process for flexible CdS CdTe thin film solar cells with high specific power", Eunwoo Cho, Yoonmook Kang, Donghwan Kim, and Jihyun Kim, Optics Express 24(10) A791 (2016).


5. "Elevated temperature performance of Si-implanted solar-blind β-Ga2O3 photodetectors", Shihyun Ahn, Fan Ren, Sooyeoun Oh,  Younghun Jung, Jihyun Kim, Michael A. Mastro, Jennifer K. Hite, Charles R. Eddy, Jr., and S. J. Pearton, Journal of Vacuum Science and Technology B 34(4) 041207 (2016).

6. "Effect of 5 MeV proton irradiation damage on performance of β-Ga2O3 photodetectors", Shihyun Ahn, Yi-Hsuan Lin, Fan Ren, Sooyeoun Oh, Younghun Jung, Gwangseok Yang, Jihyun Kim, Michael A. Mastro, Jennifer K. Hite, Charles R. Eddy Jr., and Stephen J. Pearton, Journal of Vacuum Science and Technology B 34(04) 041213 (2016).


7. "Effects of proton irradiation and thermal annealing on lift-state step-stressed AlGaN/GaN high electron mobility transistors", Byung-Jae Kim, Shihyun Ahn, Fan Ren, Stephen J. Pearton, Gwangseok Yang and Jihyun Kim, Journal of Vacuum Science and Technology B 34(4) 041231 (2016).

 

8. "Exfoliated b-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics", Janghyuk Kim, Sooyeoun Oh, Michael A. Mastrob and Jihyun Kim, Phys. Chem. Chem. Phys., 18 15760 (2016)

 

9. "In Situ thickness control of black phosphorus field-effect transistors via ozone treatment", Suhyun Kim, Younghun Jung, Jong-Young Lee, Gwan-Hyoung Lee and Jihyun Kim, Nano Research 9, 3056 (2016)

 

10. "Tuning the thickness of black phosphorus via ion bombardment-free plasma etching for device performance improvement", Geonyeop Lee, Jong-Yong Lee, Gwan-Hyoung Lee and Jihyun Kim, Journal of Material Chemistry C, 4, 6234-6239 (2016)

 

11. "Chemical etching behavior of non-polar GaN sidewalls", Younghun Jung, Soohwan Jang, Kwang Hyeon Baik, Hong-Yeol Kim, Jihyun Kim, Journal of Crystal Growth (2016) 

 

12. "Radiation hard and ultra-lightweight polycrystalline CdTe thin film solar cells for space applications", Gwangseok Yang, Eun Woo Cho, Yun Jeong Hwang, Byoung Koun Min, Yoon mook Kang, Donghwan Kim, Jihyun Kim, Energy Technology, 4, 1463-1468 (2016)

 

13. " Quasi-two-dimensional β-Gallium oxide Solar-blind Photodetectors with Ultrahigh Responsivity", Sooyeoun Oh, Janghyuck Kim, Fen Ren, Stephen J. Pearton, Jihyun Kim, Journal of Material Chemistry C, 4,9245 (2016)

 

14. "Transfer-Free Growth of Multilayer Graphene Using Self-Assembled Monolayers", Gwangseok Yang, Hong-Yeol Kim, and Jihyun Kim, ACS Applied Materials & Interfaces, 8, 27115-27121 (2016).

 

15. "Electrical Characteristics of Vertical Ni/β-Ga2O3 Schottky Barrier Diodes at High Temperatures", Sooyeoun Oh, Gwangseok Yang, and Jihyun Kim, ECS journal of Solid State Science and Technology, 6, Q3022 (2016)

 

 

 

2015

1. "AuCl3 chemical doping on defective graphene layer",  Sooyeoun Oh, Gwangseok Yang, and Jihyun Kim, J. Vac. Sci. Technol. A, 33(2), 021502-1 (2015)

 

2. "Probing patterned defects on graphene using differential interference contrast observation", Gwangseok Yang, Jihyun Kim, Appl. Phys. Lett. 106, 081901 (2015), (Volume  106, Issue 8 cover 선정)

 

3. "Broadband low reflectance stepped-cone nanostructures by nanosphere lithography", Janghyuk Kim, Byung-Jae Kim, Jihyun Kim, Suyeon Lee, and Q-Han Park, Journal of Vacuum Science & Technology A, 33, 021207(2015)

 

4. "Flexible CdTe/CdS solar cells on thin glass substrate", Won-Oh Seo, Donghwan Kim, and Jihyun Kim, Optics Express, 23(7), A316 (2015)

 

5. "Energy and dose dependence of proton-irradiation damage in graphene", Gwangseok Yang, Byung-Jae Kim, Kyeounghak Kim, Jeong Woo Han, and Jihyun Kim, RSC advances, 5, 31861 (2015).

 

6. "Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing", Byung-Jae Kim, Ya-Hsi Hwang, Shihyun Ahn, Weidi Zhu, Chen Dong, Liu Lu, Fan Ren, M. R. Holzworth, Kevin S. Jones, Stephen J. Pearton, David J. Smith, Jihyun Kim, and Ming-Lan Zhang, Appl. Phys. Lett., 106, 153504 (2015)

 

7. "Precise control of defects in graphene using oxygen plasma", Geonyeop Lee, Kyeounghak Kim, Jeong Woo Han, Jihyun Kim, Journal of Vacuum Science & Technology A, 33, 060602 (2015)

 

8. "Wafer-scale synthesis of multi-layer graphene by high-temperature carbon ion implantation", Janghyuk Kim, Geonyeop Lee, and Jihyun Kim, Appl. Phys. Lett., 107, 033104 (2015) (Journal-highlights in AIP publishing 에 선정)

 

9. "Self-aligned growth of CdTe photodetectors using a graphene seed layer", Gwangseok Yang, Donghwan Kim, and Jihyun Kim, Optics Express, 23(19), A1081 (2015).

 

10. "Effects of defect density on ultrathin graphene-based metal diffusion barriers", Sooyeoun Oh, Younghun Jung, Jihyun Kim, Journal of Vacuum Science & Technology A, 33, 061510 (2015)

 

11. "Development of solar-blind photodetectors based on Si-implanted β-Ga2O3", Sooyeoun Oh, Younghun Jung, Michael A. Mastro, Jennifer K. Hite, Charles R. Eddy Jr., and Jihyun Kim, Optics Express, 23(22), 28300 (2015)

 

 

 

2014 

 

 

1. "High-yield Assembly of Graphene Field-effect Transistors under a Non-uniform Electric Field", Hyunik Park, Sooyeoun Oh, and Jihyun Kim, ECS Solid State Letters, 3(2), M15 (2014)


2. "Selective deposition of graphene sheets on a flexible substrate by a non-uniform electric field", Sooyeoun Oh, Hyunik Park, Younghun Jung, Jiwan Kim, Min Suk Oh and Jihyun Kim,Journal of Vacuum Science & Technology B, 32, 020602 (2014)


3. "Study on the effects of proton irradiation on the DC characteristics of AlGaN/GaN high electron mobility transistors with source field plate", Lu Liu, Ya-Hsi Hwang, Yuyin Xi, Fan Ren, Valentin Craciun, Stephen J. Pearton, Gwangseok Yang, Hong-Yeol Kim, and Jihyun Kim, Journal of Vacuum Sicence & Technology B, 32(2), 02202 (2014)


4. "Chemical bath deposition of cadmium sulfide on graphene-coated flexible glass substrate", Won-Oh Seo, Younghun Jung, Jiwan Kim, Donghwan Kim, and Jihyun Kim, Appl. Phys. Lett. 104, 133902 (2014)


5. "Layer-by-layer AuCl3 doping of stacked graphene films", Sooyeoun Oh, Byung-Jae Kim and Jihyun Kim, Physica Status Solidi (RRL) 8, 441 (2014) 

 

6. "GaN-based light-emitting-diodes on graphene-coated flexible substrate", Gwangseok Yang, Younghun Jung, Camilo Vélez Cuervo, Fan Ren, Stephen J. Pearton, and Jihyun Kim, Optics Express 22(S3), A812 (2014)

 

7. "Post-growth CdCl2 treatment on CdTe thin films grown on graphene layers using close-spaced sublimation method", Younghun Jung, Gwangseok Yang, Seungju Chun, Donghwan Kim, and Jihyun Kim, Optics Express 22(S3), A986 (2014)


8. "Chemical Etching Behavior of Semipor (11-22) and Nonpolar (11-20) Gallium Nitride Films" Younghun Jung, Kwang Hyeon Baik, Michel A. Mastro, Jennifer K. Hite, Charles R. Eddy Jr., and Jihyun Kim, Physical Chemistry Chemical Physics (Accepted)


9. "CdCl2 activation annealing of CdTe microwires grown by close-spaced sublimation method" Gwangseok Yang, Younghun Jung, Seungju Chun, Donghwan Kim, and Jihyun Kim, ECS Solid State Letters 3(9), Q47-Q50 (2014)


10. "Single CdTe microwire photodetectors grown by close-spaced sublimation method" Gwangseok Yang, Byung-Jae Kim, Donghwan Kim, and Jihyun Kim, Optics Express 22(16), 18843-18848 (2014)


11. "Flexible cadmium telluride thin films grown on electron-beam-irradiated graphene/thin glass substrate" Won-Oh Seo, Yong Hwan Koo, Byungnam Kim, Byung Cheol Lee, Donghwan Kim, and Jihyun Kim, Applied Physics Letters, 105, 083902 (2014)


12. "Improvement of conductivity in graphene by Ag nanowires under a non-uniform electric field" Geonyeop Lee, Sooyeoun Oh, Byung-Jae Kim, and Jihyun Kim, ECS Solid State Letters, 3(12), M41-M44 (2014)

 

 

 

2013

1. “Flexible graphene-based chemical sensors on paper substrates”, Gwangseok Yang, Chongmin Lee, Jihyun Kim, Fan Ren and Stephen J. Pearton, Phys. Chem. Chem. Phys., 15, 1798 (2013)

 

2. “A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells”, Hyunik Park, Kwang Hyeon Baik, Jihyun Kim, Fan Ren, and Stephen J. Pearton, Optics Express, 21(10), 12908 (2013)

 

3. “Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors”, Lu Liu, Chien-Fong Lo, Yuyin Xi, Yuxi Wang, Fan Ren, Stephen J. Pearton, Hong-Yeol Kim, Jihyun Kim, Robert C. Fitch, Dennis E. Walker, Jr., Kelson D. Chabak, James K. Gillespie, Stephen E. Tetlak, Glen D. Via, and Antonio Crespo, Ivan I. Kravchenko, Journal of Vacuum Science & Technology B, 31(2), 022201 (2013)

 

4. “Review of radiation damage in GaN-based materials and devices”, Stephen J. Pearton, Richard Deist, Fan Ren, Lu Liu, Alexander Y. Polyakov, Jihyun Kim, Journal of Vacuum Science & Technology A, 31(5) 050801 (2013)

 

5. “Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure”, Yuyin Xi, Lu Liu, Ya-His Hwang, Oluwadamilola Phillips, Fan Ren, Stephen J. Pearton, Jihyun Kim, Chein-Hsing Hsu, Chien-Fong Lo, Jerry Wayne Johnson, Journal of Vacuum Science & Technology B, 31(3), 032202 (2013)

 

6. “Etch pit investigation of free electon concentration controlled 4H-SiC”, Hong-Yeol Kim, Yun Ji Shin, Jung Gon Kim, Hiroshi Harima, Jihyun Kim, Wook Bahng, Journal of Crystal Growth 369, 38 (2013)

 

7. “Radiation effects in GaN materials and devices”, Alexander Y. Polyakov, S. J. Pearton, Patrick Frenzer, Fan Ren, Lu Liu, and Jihyun Kim, Journal of Materials Chemistry C, 1, 877 (2013)

 

8. “Penetration depth profiling of proton-irradiated 4H-SiC at 6MeV and 8MeV by micro-Raman spectroscopy”, Hong-Yeol Kim, Jihyun Kim, Jaime A. Freitas Jr., Applied Surface Science, 270, 44 (2013)

 

9. “Three-dimensional graphene foam-based transparent conductive electrodes in GaN-based blue light-emitting diodes”, Byung-Jae Kim, Gwangseok Yang, Min Joo Park, Joon Seop Kwak, Kwang Hyeon Baik, Donghwan Kim, and Jihyun Kim, Appl. Phys. Lett. 102, 161902 (2013)

 

10. “Three-dimensional graphene network-based chemical sensors on paper substrates.”, Gwangseok Yang, Chongmin Lee and Jihyun Kim, the Journal of The Electrochemical Society, 160(9), B160 (2013)

 

11. "CdTe microwires-based ultraviolet photodetectors aligned by a non-uniform electric field", Hyunik park, Gwangseok Yang, Seunju Chun, Donghwan Kim and Jihyun Kim, Appl. Phys. Lett. 103, 051906 (2013)

 

12. "Catalytic growth of CdTe nanowires by closed space sublimation method", Gwangseok Yang, Younghun Jung, Seungju Chun, Donghwan Kim, Jihyun Kim, Thin Solid Films, 546(1), 375-378 (2013)

 

13. "Electrical characterization of 60Co gamma radiation-exposed InAlN/GaN high electron mobility transistors", Hong-Yeol Kim, Jihyun Kim, Lu Liu, Chien-Fong Lo, Fan Ren, Stephen J. Pearton, J. Vac. Sci. Technol. B 31(5), 051210 (2013)

 

14. "GaN-based ultraviolet light-emitting diodes with AuCl3-doped graphene electrodes" Byung-Jae Kim, Gwangseok Yang, Hong-Yeol Kim, Kwang Hyeon Baik, Michael A. Mastro, Jennifer K. Hite, Charles R. Eddy, Jr., Fan Ren, Stephen J. Pearton and Jihyun Kim, Optics Express 21 (23) 29025 (2013)

 

15. "Growth of CdTe Thin Films on Graphene by Close-Spaced Sublimation Method" Younghun Jung, Gwangseok Yang, Seungju Chun, and Jihyun Kim, Appl. Phys. Lett. 103, 231910 (2013)

 

16. "Effect of 5MeV proton radiation on DC performance and reliability of cicular-shaped AlGaN/GaN high electron mobility transistors", Yuyin Xi, Yueh-Ling Hsieh, Ya-Hsi Hwang, Shun Li, Fan Ren, Stephen J. Pearton, Erin Patrick, Mark E. Law, Gwangseok Yang, Hong-Yeol Kim, Jihyun Kim, Albert G. Baca, Andrew A. Allerman and Carlos A. Sanchez, J. Vac. Sci. Technol. B 32(1), 012201 (2014)

 

 

 

2012

 

1.     “Proton-irradiated InAlN/GaN high electron mobility transistors at 5, 10, and 15 MeV energies”, H.-Y. Kim, C. F. Lo, L. Liu, F. Ren, J. Kim and S. J. Pearton, Applied Physics Letters, 100, 012107 (2012)

 

2.     “Simulation and experimental study of ArF 193nm laser lift-off AlGaN/GaN high electron mobility transistors”, T. S. Kang, X. T. Wang, C. F. Lo, F. Ren, S. J. Pearton, O. Laboutin, Yu Cao, J. W. Johnson and Jihyun Kim, J. Vac. Sci. Technol. B 30(1), 011203 (2012).

 

3.     "Control of the Free Carrier Concentrations in a Si-doped Freestanding GaN Grown by Hydride Vapor Phase Epitaxy", Hyun Jong Park, Hong-Yeol Kim, Jun Young Bae, Sunghwan Shin, and Jihyun Kim, Journal of Crystal Growth, 350(1), 85 (2012)

 

4.     "Effects of Proton Irradiation Energies on Degradation of AlGaN/GaN High Electron Mobility Transistors", Hong-Yeol Kim, Chien Fong Lo, Lu Liu, Fan Ren, Stephen J. Pearton, Jihyun Kim, Journal of Vacuum Science & Technology B, 30(1), 012202 (2012)

 

5.     "Graphene as a Diffusion Barrier for Al and Ni/Au Contacts on Silison", Hong-Yeol Kim, Chongmin Lee, Fan Ren, Stephene J. Pearton, and Jihyun Kim, Journal of Vacuum Science & Technology B, 30(3), 030602 (2012)

 

6.     "Graphene-based Flexible NO2 Chemical Sensors", Chongmin Lee, Jaehui Ahn, Ki Bong Lee, Donghwan Kim and Jihyun Kim, Thin Solid Films, 520(16), 5459 (2012)

 

7.     “Chemical Etch Characteristics of N-Face and Ga-Face GaN by Phosphoric Acid and Potassium Hydroxide Solutions”, Younghun Jung, Jaehui Ahn, Kwang Hyeon Baik, Donghwan Kim, Stephen J. Pearton, Fan Ren, and Jihyun Kim Jounal of Electrochemical Society, 159(2), H117 (2012)

 

8.     “Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation” Chien-Fong Lo, L. Liu, T. S. Kang, Fan Ren, C. Schwartz, E. Filtsiyan, L. Chernyak, Hong-Yeol Kim, Jihyun Kim, Sang Pil Yun, O. Laboutin, Y. Cao, J. W. Johnson, and S. J. Pearton, Journal of Vacuum Science & Technology B,  30(3), 031202 (2012)

 

9.    “GaN-based light-emitting diodes on origami substrates”, Younghun Jung, Xiaotie Wang, Jiwan Kim, Sung Hyun Kim, Fan Ren, Stephen J. Pearton and Jihyun Kim, Appl. Phys. Lett, 100, 231113 (2012)

 

10.  “Selective chemical etch of gallium nitride by phosphoric acid”, Chongmin Lee, Jennifer K. Hite, Michael A. Mastro, Jaime A. Freitas, Jr., Charles R. Eddy, Jr., Hong-Yeol Kim, and Jihyun Kim, Jounal of Vacuum Science & Technology A 30(4), 040602 (2012)

 

11.  “Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors”, Chien Fong Lo, Lu Liu, Fan Ren, Stephen J. Pearton, Brent P. Gila, Hong-Yeol Kim, Jihyun Kim, Oleg Laboutin, Yu Cao, Jerry W. Johnson, and Ivan I. Kravchenko, Journal of Vacuum Science & Technology B 30(4), 041206 (2012)

 

12.  “Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes” Byung-Jae Kim, Chongmin Lee, Michael A. Mastro, Jennifer K. Hite, Charles R. Eddy, Jr., Fan Ren, Stephen J. Pearton, and Jihyun Kim, Appl. Phys. Lett. 101, 031108 (2012)

 

13.  “GaN-based light-emitting diodes by laser lift-off with micro- and nano-sized reflectors”, Younghun Jung, Sung-Hyun Kim, Jihyun Kim, Xiaotie Wang, Fan Ren, Kyoung Jin Choi, and Stephen J. Pearton, Journal of Vacuum Science & Technology A 30(5), 050605 (2012)

 

14.  “A facile method for flexible GaN-based light-emitting diodes”, Younghun Jung, Xiaotie Wang, Sung-Hyun Kim, Fan Ren, Jihyun Kim, and Stephen J. Pearton, Physica Status Solidi (RRL), 6(11), 421 (2012)

 

15.  “Electroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields”, Hyunik Park, Byung-Jae Kim, and Jihyun Kim, Optics Express, 20(23), 25249 (2012)

 

16.  “Wet chemical etched CdTe thin film solar cells” Seungju Chun, Seunghun Lee, Younghun Jung, Jong Seong Bae, Jihyun Kim, Donghwan Kim, Current Applied Physics 13, 211 (2013)

 

17.  “Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments”, Chien-Fong Lo, Lu Liu, Byung-Hwan Chu, Fan Ren, Stephen J. Pearton, Sylvain Dore, Chien-Hsing Hsu, Jihyun Kim, Amir M. Dabiran, and Peter P. Chow, Journal of Vacuum Science & Technology B, 30(1), 010606 (2012)

 

18.  “Spray pyrolysis prepared yellow to red color tunable Sr1-xCaxSe:Eu2+ phosphors for white LED”, Wonkeun Chung, Hyunchul Jung, Chang Hun Lee, Jihyun Kim, and Sung Hyun Kim, Optics Express, 20(12), 12885 (2012)

 

19.  “Effects of semiconductor processing chemicals on conductivity of graphene”, Chung Wei Chen, F. Ren, Gou-Chung Chi, S. C. Hung, Y. P. Huang, Jihyun Kim, Ivan Kravchenko, and Stephen J. Pearton, Journal of Vacuum Science & Technology B, 30(4), 040602 (2012)

 

20.  “193 nm excimer laser lift-off for AlGaN/GaN high electron mobility transistors”, Xiaotie Wang, Chien-Fong Lo, Lu Liu, Camilo V. Cuervo, Ren Fan, Stephen J. Pearton, Brent Gila, Michael R. Johnson, Lin Zhou, David J. Smith, Jihyun Kim, Oleg Laboutin, Yu Cao and Jerry W. Johnson,  Journal of Vacuum Science & Technology B, 30(5) 051209 (2012)

 

21.  “UV ozone treatment for improving contact resistance on graphene”, Chung Wei Chen, Fan Ren, Gou-Chung Chi, Sheng-Chun Hung, Y. P. Huang, Jihyun Kim, Ivan Kravchenko, and Stephen J. Pearton, Journal of Vacuum Science & Technology B, 30(6), 060604 (2012)

 

 

 

2011

 

1.    "Large-area transparent conductive Few-Layer Graphene electrode in GaN-based Ultra-Violet Light-Emitting Diodes", Byung-Jae Kim, Chongmin Lee, Younghun Jung, Kwang Hyeon Baik, Michael A. Mastro, Jennifer K. Hite, Charles R. Eddy Jr, and Jihyun Kim, Applied Physics Letters 99, 143101 (2011) Selected for Virtual Journal of Nanoscale Science & Technology

 

2.    "Single n-GaN Microwire / p-Silicon Thin Film Heterojunction Light-Emitting Diode", Jaehui Ahn, Michael A. Mastro, Paul B. Klein, Jennifer K. Hite, Boris Feigelson, Charles R. Eddy, Jr., and Jihyun Kim, Optic Express, 19, 21692 (2011)

 

3.    "Large-area Suspended Graphene on GaN Nanopillars", Chongmin Lee, Byung-Jae Kim, Fan Ren, Stephen J. Pearton, and Jihyun Kim, Journal of Vacuum Science and Technology B 29, 060601 (2011).

 

4.    “Nanostructured n-ZnO / thin film p-silicon heterojunction light-emitting diodes”, Jaehui Ahn, Hyunik Park, Michael A. Mastro, Jennifer K. Hite, Charles R. Eddy, Jr., and Jihyun Kim, Optics Express, 19, 26006 (2011).

 

5.    Fabrication of GaAs subwavelength structure (SWS) for solar cell applications", Byung-Jae Kim, and Jihyun Kim, Optics Express, 19, S3, A326 (2011)

 

6.    "Polarization and Space-Charge-Limited Current in Ⅲ-Nitride Heterostructure Nanowires", Michael A. Mastro, Hong-Yeol Kim, Jaehui Ahn, Blake Simpkins, Pehr Pehrsson, Jihyun Kim, Jennifer K. Hite, and Charles R. Eddy, Jr., IEEE Transactions on Electron Devices, 58, 10, 3401 (2011)

 

7.    "Three-Dimensional Multilayered Nanostructures with Controlled Orientation of Microdomains from Crosslinkable Block Copolymer", H. Jung, D. Hwang, E. Kim, B. -J. Kim, W. B. Lee, J. Poelma, J. Kim, C. Hawker, J. Huh, D. Y. Ryu, J. Bang, ACS Nano, 5, 8, 6164 (2011)

 

8.    "Probing proton irradiation effects in GaN by micro-Raman spectroscopy" H.-Y. Kim, J. A. Freitas, Jr. and J. Kim, Europhysics Letters, 96, 26004 (2011)

 

9.    "Effects of proton irradiation on DC characteristics of InAlN/GaN high electron mobility transistors", C. F. Lo, L. Liu, F. Ren, H.-Y. Kim, J. Kim, S. J. Pearton, O. Laboutin, Yu Cao, J. W. Johnson, and I. I. Kravchenko, Journal of Vacuum Science and Technology B, 29(6), 061201 (2011)

 

10.  "Formation of Ni-Silicide at the Interface of Ni/4H-SiC", Younghun Jung and Jihyun Kim, Journal of The Electrochemical Society, 158(5), H551-H553(2011)

 

11.  "Etched Surface Morphology of Heteroepitaxial Nonpolar and Semipolar GaN Films by Photoenhanced Chemical Wet Etching", Kwang Hyeon Baik, Hoo-Young Song, Sung-Min Hwang, Younghun Jung, Jaehui Ahn, and Jihyun Kim, Journal of The Electrochemical Society, 158(4), D196-D199(2011)

 

12.  "Vertical Zinc Oxide Nanowires Embedded in Self-Assembled Photonic Crystal", Michael A. Mastro, Lena Mazeina, Byung-Jae Kim, Sharka M. Prokes, Jennifer Hite, Charles R. Eddy, Jr. and Jihyun Kim, Photonics and Nanostructures - Fundamentals and Applications, 9, 91-94 (2011)

 

13.  "Gallium nitride light emitter on a patterned sapphire substrate for improved defectivity and light extraction efficiency", Michael A. Mastro, Byung-Jae Kim, Younghun Jung, Jennifer K. Hite, Charles R. Eddy Jr., Jihyun Kim, Current Applied Physics, 11, 682-686(2011)

 

14.  "Emission Enhancement from Non-polar a-plane Ⅲ-Nitride Nanopillar", Byung-Jae Kim, Younghun Jung, Michael A. Mastro, Jennifer Hite, Neeraj Nepal, Charles R. Eddy Jr., Jihyun Kim, Journal of Vacuum Science and Technology B, 29 (2), 021004 (2011)

 

15.  "Penetration effects of high-energy protons in GaN: a micro-Raman spectroscopy study", Hong-Yeol Kim, Jaime A. Freitas, Jihyun Kim, Electrochemical and Solid State Letters, 14 (1), H5-H8(2011)

 

 

 

2010

 

1.    "Violet Electroluminescence from p-GaN Thin Film / n-GaN Nanowire Homojunction", Jaehui Ahn, Michael A. Mastro, Jennifer Hite, Charles R. Eddy, Jr. and Jihyun Kim, Applied Physics Letters 96, 132105 (2010)

 

2.    "Electroluminescence from ZnO Nanoflowers / GaN Thin Film P-N Hterojunction" , Jaehui Ahn, Michael A. Mastro, Jennifer Hite, Charles R. Eddy, Jr. and Jihyun Kim, Applied Physics Letters, 97, 082111 (2010)

 

3.    "Transparent conductive graphene electrode in GaN-based ultra-violet light emitting diodes", Byung-Jae Kim, Michael A. Mastro, Jennifer Hite, Charles R. Eddy, Jr. and Jihyun Kim, Optics Express, 18, 22, 23030 (2010)

 

4.    "Enhancement of the light-extraction efficiency of GaN-based light-emitting diodes using a Benzocyclobutene-based Graded-Refractive-Index Layer", Byung-Jae Kim, Joona Bang, Sung Hyun Kim and Jihyun Kim, Journal of The Electrochemical Society, 157 (4), H449-H451 (2010)

 

5.    "Polarization fields in III-nitride nanowire devices", Michael A Mastro, Blake Simpkins, George T Wang, Jennifer Hite, Charles R Eddy Jr, Hong-Youl Kim, Jaehui Ahn and Jihyun Kim, Nanotechnology, 21, pp.145205 (2010)

 

6.    "Effects of Photo Electrochemical Etching of N-polar and Ga-polar Gallium Nitride on Sapphire Substrates", Younghun Jung, Kwang Hyeon Baik, Fan Ren, Stephen J. Pearton and Jihyun Kim, Journal of The Electrochemical Society, 157 (6), H676-H678 (2010)

 

7.    "Peak Channel Temperature of Graphene-based Transistors", Geunwoo Ko, Younghun Jung and Jihyun Kim, Journal of Nanoscience and Nanotechnology, vol. 10, pp. 4889-4892 (2010)

 

8.    "Controlled Fabrication of Gallium Nitride Nano- and Micro- Wires by Dielectrophoretic Force and Torque", Jaehui Ahn, Geunwoo Ko, Jihyun Kim, Michael A. Mastro, Jennifer Hite, Charles R. Eddy, Jr., Current Applied Physics, vol. 10, pp. 703-707 (2010)

 

9.    "Electrical and Structural Characterizations of Non-polar AlGaN/GaN Heterostructures", Younghun Jung, Michael Mastro, Jennifer Hite, Charles R Eddy and Jihyun Kim, Thin Solid Films, 518 pp.1747-1750 (2010)

 

10.  "Optical Characterizations of GaN Nanorods fabricated by Natural Lithography ", Byung-Jae Kim, Joona Bang, Sung Hyun Kim and Jihyun Kim, The Korean Journal of Chemical Engineering, 27(2), 693-696 (2010)

 

11.  "Graphene-based Nitrogen Dioxide Gas Sensors", G. Ko, H.-Y. Kim, J. Ahn, Y. -M. Park, K.-Y. Lee and J. Kim, Current Applied physics, vol. 10, pp. 1002-1004 (2010)

 

12.  "Rechargeable zinc oxide / carbon nano-structures", M. A. Mastro, M. J. Tadjer, F. J. Kub, K. D. Hobart, C. R. Eddy, Jr., J. Kim, M.R. Papantonakis, Journal of Ceramic Processing Research, Vol. 11, pp.40-43 (2010)

 

13.  "Electrical Characterization of 5 MeV Proton-Irradiated Few Layer Graphene", G. Ko, H.-Y. Kim, F. Ren, S. J. Pearton and J. Kim, Electrochemical and Solid-State Letters, vol.13 pp.K32-K34 (2010) Selected for Virtual Journal of Nanoscale Science & Technology

 

14.  "Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes", Hong-Yeol Kim, F. Ren, Jihyun Kim, and Soohwan Jang, Journal of Vacuum Science and Technology B, 28(1), pp. 27-29 (2010)

 

15.  "Surface texturing of GaAs using a Nanosphere Lithography Technique for Solar Cell Applications", B. J. Kim, J. Bang, S. Jang, D. Kim, J. Kim, Thin Solid Films, 518, 6583(2010).

 

16.  "Characterization of Bulk GaN Crystals Grown from Solution at Near Atmospheric Pressure", N.Y. Garces, B. N. Feigelson, J. A. Freitas, Jr., Jihyun Kim, R. Myers-Ward, E.R. Glaser, Journal of Crystal Growth, 312, 2558(2010)

 

17.  "Device Performance of Nonpolar a-plane (11-20) InGaN/GaN Light-emitting Diodes on r-plane Sapphire Substrates", Kwang Hyeon Baik, Jae-Hyoun Park, Sung-Ho Lee, Hooyoung Song, Sung-Min Hwang, Seogwoo Lee, Junggeun Jhin, Jeong Tak and Jihyun Kim, Journal of the Korean Physical Society, Vol. 56, pp. 1140-1143 (2010)

 

18.  "Enhanced Light Extraction of Nonpolar a-plane (11-20) GaN Light Emitting Diodes on Sapphire Substrates by Photo-Enhanced Chemical Wet Etching", Younghun Jung, Jihyun Kim, Soohwan Jang, Kwang Hyeon Baik, Yong Gon Seo and Sung-Min Hwang, Optics Express, Vol. 18, No.9, pp.9728-9732 (2010)

 

19.  "Post-Annealing Behavior of Ni/Au Schottky Contact on Non-Polar a-plane GaN" , Younghun Jung, Michael Mastro, Jennifer Hite, Charles R. Eddy Jr. and Jihyun Kim, Thin Solid Films, Vol. 518 (20), pp.5810-5812 (2010)

 

20.  "Proton irradiation effects on AlN/GaN high electron mobility transistors", C. F. Lo, C. Y. Chang, B. H. Chu, H.-Y. Kim, J. Kim, David A. Cullen, Lin Zhou, David. J. Smith, S. J. Pearton, Amir Dabiran, B. Cui, P. P. Chow, S. Jang, and F. Ren, Journal of Vacuum Science & Technology B, Vol. 28 (5), pp. L47-L51, (2010)

 

 

 

2009

 

1.    "Thermal Modeling of Graphene layer on the Peak Channel Temperature of AlGaN/GaN High Electron Mobility Transistors", Geunwoo Ko and Jihyun Kim, Electrochemical and Solid-State Letters, 12 (2) H29-H31 (2009)

 

2.    "Luminescence characteristics of zinc oxide nanocrystals deposited on glass via a solution method", M.A. Mastro, J.A. Freitas Jr, C.R. Eddy Jr, F. Kub,J. Ahn, H.-Y. Kim, J. Kim, Physica E, Vol.41, pp.487-489 (2009)

 

3.    "Fabrication of GaN Nanorods by Inductively Coupled Plasma Etching via SiO2 Nanosphere Lithography", Byung-Jae Kim, Hyunjung Jung, Hong-Yeol Kim, Joona Bang, and Jihyun Kim, Thin Solid Films, 517 pp.3859-3861 (2009)

 

4.    "Characterization and Cu Electroless Plating of Laser-drilled Through-Wafer via-holes in GaN/Al2O3", Jaehui Ahn, Hong-Yeol Kim, Jae Jeong Kim and Jihyun Kim, Thin Solid Films, 517 pp.3841-3843 (2009)

 

5.    "Self-Annealing in Neutron-Irradiated AlGaN/GaN High Electron Mobility Transistors", Hong-Yeol Kim, Fan Ren, Stephen J. Pearton, Jihyun Kim, Electrochemical and Solid-State Letters, Vol.12, H173-H175(2009)

 

6.    "Electrical Characterizations of Neutron-Irradiated SiC Schottky Diodes", Geunwoo Go, Hong-Yeol Kim, Jihyun Kim, The Korean Journal of Chemical Engineering, Vol.26, pp.285-287 (2009)

 

7.    "Enhanced light emission of nano-patterned GaN via block copolymerr thin films", Yo-Han Cho, Kyunghee Lee, Kyunghoon Kim, Kwang Hyun Baik, Jinhan Cho, Jihyun Kim, Kyusoon Shin, and Joona Bang, The Korean Journal of Chemical Engineering, Vol.26, pp.277-280 (2009)

 

8.    "Nature of luminescence and strain in gallium nitride nanowires", M. A. Mastro, S. Maximenko, M. Gowda, B.S. Simpkins, P.E. Pehrsson, J.P. Long, A.J. Makinen, J. A. Freitas, Jr., J.K. Hite, C. R. Eddy, Jr., J. Kim, Journal of Crystal Growth, Vol.311, pp.2982–2986 (2009)

 

9.    "Enhancement of light extraction efficiency of ultraviolet light emitting diodes by patterning of SiO2 nanosphere arrays", B.J. Kim, H. Jung, J. Shin, M.A. Mastro, C.R. Eddy Jr., J.K. Hite, S.H. Kim, J. Bang, J. Kim, Thin Solid Films Vol.517, pp.2742–2744 (2009)

 

10.  "GaN-based Light Emitting Diode with Three-dimensional Silver Reflectors", B. J. Kim, H. Jung, S. H. Kim, J. Bang, and J. Kim, IEEE Photonics Technology Letters, Vol.21, pp.700–7002 (2009)

 

11.  “Synthesis of manganese oxide nanostructures on carbon paper for supercapacitor applications, M. A. Mastro, C. R. Eddy, Jr., F. Kub, J. Park, J. Cho, J. Kim, Surface Review and Letters, vol.16, pp. 513-517(2009)

 

12.   "Characterization of 5 MeV proton-irradiated gallium nitride nanowires", H.-Y. Kim, J. Ahn, M. A. Mastro, C. R. Eddy, Jr., J. Han, T. Yang, J. Kim, J. Vac. Sci. Tech. B, Vol.27, L11–L13 (2009)

 

13.   "Proton irradiation effects on Sb-based heterojunction bipolar transistors", C. F. Lo, H.-Y. Kim ,J. Kim, Shu-Han Chen, Sheng-Yu Wang, Jen-Inn Chyi, B. Y. Chou, K. H. Chen, Y. L. Wang, C. Y. Chang, S. J. Pearton, L. I. Kravchenko, S. Jang, F. Ren, J. Vac. Sci. Technol. B 27(6) (2009)

 

 

 

2008

 

1.    "Defects limiting performance of devices fabricated on GaN/metal heterostructure", Serguei I. Maximenko, Jaime A. Freitas, Jr., Jeffrey A. Mittereder, Larry B. Rowland, and Jihyun Kim, Applied physics letters 92, 212104 (2008)

 

2.    "Semi-insulating GaN substrates for high-frequency device fabrication", J.A. Freitas Jr., M. Gowda, J.G. Tischler, J.-H. Kim, L. Liu , D. Hanse, Journal of Crystal Growth 310, pp.3968– 3972 (2008)

 

3.    "Electromagnetic propagation in nanostructures", Michael A. Mastro, R. T. Holm, Charles R. Eddy Jr. and Jihyun Kim, Journal of Ceramic Processing Research. Vol. 9, pp. 1~5 (2008)

 

4.    "Characterization of AlGaN/GaN HEMT irradiated at 5 keV and 25 MeV proton energies", Hong-Yeol Kim, Jaehui Ahn, Jihyun Kim, Sang Pil Yun and Jae Sang Lee, Journal of Ceramic Processing Research. Vol. 9, pp. 155~157 (2008)

 

5.    "Micro-raman spectroscopy and atomic force microscopy characterization of gallium nitride damaged by accelerated gallium ions", Hong Youl Kim, Jaehui Ahn and Jihyun Kim, Journal of Ceramic Processing Research. Vol. 9, pp. 10~12 (2008)

 

6.    "AlGaN/GaN High Electron Mobility Transistors Irradiated with 17 MeV Protons", Hong-Yeol Kim, Jihyun Kim, Sang Pil Yun, Kye Ryung Kim, Travis J. Anderson, Fan Ren and S. J. Pearton, Journal of The Electrochemical Society, 155 (7) H513-H515 (2008)

 

7.    "Experimental study of plasmonically enhanced GaN nanowire light emitters", Michael A. Mastro, Jaime A. Freitas Jr., Mark Twigg, R. T. Holm, Charles R. Eddy Jr., Fritz Kub, Hong-Yeol Kim, Jaehui Ahn, and Jihyun Kim, phys. stat. sol. (a) 205, pp.378–382 (2008)

 

8.    "Inductively coupled plasma etching of nano-patterned sapphire for flip-chip GaN light emitting diode applications", Byung-Jae Kim, Michael A. Mastro, Hyunjung Jung, Hong-Yeol Kim, Sung Hyun Kim, Ron T. Holm, Jennifer Hite, Charles R. Eddy Jr., Joona Bang, Jihyun Kim, Thin Solid Films 516, pp.7744–7747 (2008)

 

9.    "Zinc Sulphide Overlayer Two-Dimensional Photonic Crystal for Enhanced Extraction of Light from a Micro Cavity Light-Emitting Diode", Michael A. MASTRO, Chul Soo KIM, Mijin KIM, Josh CALDWELL, Ron T. HOLM,Igor VURGAFTMAN, Jihyun KIM, Charles R. EDDY, Jr., and Jerry R. MEYER, Japanese Journal of Applied Physics Vol.47, pp.7827–7830 (2008)

 

10.  "Characterization of erbium chloride seeded gallium nitride nanocrystals", J. Ahn, M.A. Mastro, J.A. Freitas Jr., H.-Y. Kim, R.T. Holm, C.R. Eddy Jr., J. Hite, S.I. Maximenko, J. Kim, Thin Solid Films, Vol.517, pp.1111-1114 (2008)

 

11.  "Enhancement of Light Extraction Efficiency via Inductively Coupled Plasma Etching of Block Copolymer Templates on GaN/Al2O3", Hong-Yeol Kim, Taejoon Kim, Jae Hui Ahn, Kyusoon Shin, Joona Bang, and Jihyun Kim, Electronic Materials Letters, Vol. 4, pp.185-188 (2008)

 

 

 

2007

 

1.    “Properties of Fe-doped semi-insulating GaN substrates for high-frequency device fabrication”, J.A. Freitas Jr., J.G. Tischler, J.-H. Kim, Y. Kumagai and A. Koukitu, Journal of Crystal Growth, 305, 403(2007).

 

 

2.    “Plasmonically enhanced emission from a group-III nitride nanowire emitter”, M. A Mastro, J. A Freitas Jr, O. Glembocki, C. R Eddy Jr, R T Holm, R. L Henry, J. Caldwell, R. W Rendell, F. Kub and J Kim, Nanotechnology, 18, 265401(2007).

 

 

3.    “Properties of epitaxial GaN on refractory metal substrates”, J. A. Freitas, L. B. Rowland, J. Kim, M. Fatemi, Applied Physics Letters, 90, 091910(2007).

 

 

4.    “ZnO-Based Cyclodextrin Sensor Using Immobilized Polydiacetylene Vesicles”, C. W. Lee, H. Choi, D. J. Ahn, J. Kim, J.-M. Kim, F. Ren and S. J. Pearton, Electrochem. Solid-State Lett., 10(1), J1(2007).

 

 

5.    “Evolution of Strain throughout Gallium Nitride Deposited on Silicon Carbide”, M. A. Mastro, N. D. Bassim, J. A. Freitas, M. E. Twigg, C. R. Eddy, D. K. Gaskill, R. L. Henry, R. T. Holm, J. Kim, P. G. Neudeck, A. J. Trunek, J. A. Powell, Journal of Cer. Pro. Res,, 8(5), 331(2007).

 

 

6.    “Controlled synthesis of single-crystalline InN nanorods”, O. Kryliouk, H. Park and Y. Won, T. Anderson, A. Davydov, I. Levin, J. Kim ad J. A. Freitas, Nanotechnology, 18, 135606(2007).

 

 

7.    “Simple fabrication of nanoporous films on ZnO forn enhanced light emission”, J. Bang, K.Kim, S. Mok, F. Ren, S. J. Pearton, K. H. Baik, S. H. Kim, J. Kim and K. Shin, Physica Status Solidi A, 204, 3417(2007).

 

 

8.    “Improved Long-Term Thermal Stability at 350˚C of TiB2-Based Ohmic Contacts on AlGaN/GaN High Electron Mobility Transistors”, R. Khanna, L. Stafford, S. J. Pearton, T. J. Anderson, F. Ren, I. Kravchenko, A. Osinsky, J. Y. Lee, K.-Y. Lee and J. Kim, Journal of Electronic Materials, 36(4), 379(2007).

 

 

9.    “Polydiacetylene-based Selective NH3 Gas Sensor Using Sc2O3/GaN Structures”, G. S. Lee, C. Lee, H. Choi, D. J. Ahn, J. Kim, B. P. Gila, C. R. Abernathy, S. J. Pearton, F. Ren, Physica Status Solidi A, 204, 3556(2007).

 

 

10.  “Rare-earth chloride seeded growth of GaN nano- and micro-crystals”, M. A. Mastro, J. A. Freitas, R. T. Holm, C. R. Eddy, Jr., J. Caldwell, K. Liu, O. Glembocki, R. L. Henry and J. Kim, Appllied Surface Science, Applied Surface Science, 253, 6157(2007).

 

 

 

 

Before 2006

 

1.    “Strain measurement in 6H-SiC under external stress”, J. Kim, F. Ren and S. J. Pearton, J. Cer. Process. Res., 7(3), 239(2006).

 

 

2.    “Laser Ablation of Via Holes in GaN and AlGaN/GaN High Electron Mobility Transistor Structures”, T. Anderson, F. Ren, S. J. Pearton, M. A. Mastro, R. T. Holm, R. L. Henry, C. R. Eddy Jr., J. Y. Lee, K.-Y. Lee, J. Kim, J. Vac. Sci. Tech. B, 24(5), 2246(2006)

 

 

3.    “Measurement of External Stress on Bulk GaN”, J. Kim, K. Baik, C. Park, S. Cho, S. J. Pearton and F. Ren, Phys. Stat. Sol. (a) 203(10), 2393(2006)

 

 

4.    “Immobilization of heterogeneous polydiacetylene supramolecules on SiC substrate for cyclodextrin sensors”, H. Choi, C. W. Lee, G. S. Lee, M. K. Oh, D. J. Ahn, J. Kim, J.-M. Kim, F. Ren, S. J. Pearton, Phys. Stat. Sol- Rapid Research Letters, 203(10), R79(2006).

 

 

5.    “Effective Temperature Measurements of AlGaN/GaN-based HEMT under various load lines using micro-Raman Technique”, J. Kim, J.A. Freitas, J. Mittereder, R. Fitch, B. S. Kang, S. J. Pearton and F. Ren, Solid-State Electroics, 50(3), 408(2006).

 

 

6.    “Thermal Stability of WSiX Schottky Contacts on n-type 4H-SiC”, Jihyun Kim, F. Ren, A. G. Baca, G. Y. Chung, S. J. Pearton, Solid-State Electronics 48(1), 175(2004).

 

 

7.    “High Dose 60Co g-ray irradiation of W/GaN Schottky Diodes”, Jihyun Kim, F. Ren, D. Scheonfeld, S. J. Pearton, A. G. Baca, R. D. Briggs, Journal of Semiconductor Technology and Science 4(2), 124(2004).

 

 

8.    “4H-SiC Schottky Diode Array with 430A Forward Current”, Jihyun Kim, K. H. Baik, S. Kim, B. S. Kang, Y. Irokawa, F. Ren, S. J. Pearton, G. Y. Chung, Electrochem. Solid-Stae Lett. 7, G125(2004).

 

 

9.    “Effects of High Dose 40 MeV Proton Irradiation on the Electroluminescent and Electrical Performance of InGaN Light-Emitting Diodes”, Rohit Khanna, K. K. Allums, C. R. Abernathy, S. J. Pearton, Jihyun Kim, F. Ren, R. Dwivedi, T. N. Fogarty and R. Wilkins, Appl. Phys. Lett. 85, 3131(2004).

 

 

10.  “Capacitance Pressure Sensor based on GaN High-Electron-Mobility-Transistor-on-Si membrane”, B. S. Kang, J. Kim, S. Jang, F. Ren, J. W. Johnson, R. J. Therrien, P Rajagopal, J. C. Roberts, E. L. Piner, K. J Linthicum, S. N. G. Chu, K. Baik, B. Gila, C. Abernathy, S. J. Pearton, Appl. Phys. Lett. 86, 253502(2005)

 

 

11.  “The Effect of Thermally Induced Stress on Device Temperature Measurements by Raman Spectroscopy”, Jihyun Kim, J. A. Freitas, Jr., P. B. Klein, S. Jang, F. Ren, and S. J. Pearton, Electrochemical and Solid-State Letters, 8 (12) G345 (2005)

 

 

12.  “2.6 A, 0.69 MWּcm-2 Single-Chip Bulk GaN p-i-n Rectifier”, Y. Irokawa, B. Luo, B. S. Kang, Jihyun Kim, J. R. LaRoche, F. Ren, K. H. Baik, S. J. Pearton, C. -C. Pan, G. -T. Chen, J. -I. Chyi, S. S. Park and Y. J. Park, Solid-State Electronics, 48(2), 359(2004).

 

 

13.  “Small Signal Measurement of Sc2O3 AlGaN/GaN MOSHEMTS”, B. Luo, R. Mehandru, B. S. Kang, J. Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, R. Fitch, J. K. Gillespie, T. Jenkins, J. Sewell, D. Via and A. Crespo, Solid-State Electronics, 48(2), 355(2004).

 

 

14.  “Si+ ion implanted MPS bulk GaN diodes “,Y. Irokawa , J. Kim , F. Ren , K. H. Baik , B. P. Gila , C. R. Abernathy , S. J. Pearton , C. -C. Pan , G. -T. Chen , J. -I. Chyi and S. S. Park, Solid-State Electronics, 48(5), 827(2004)

 

 

15.  “AlGaN/GaN HEMT based liquid sensors “,R. Mehandru, B. Luo, B. S. Kang, Jihyun Kim, F. Ren, S. J. Pearton, C. -C. Pan, G. -T. Chen and J. -I. Chyi, Solid-State Electronics 48(2), 351(2004).

 

 

16.  “Lateral Schottky GaN Rectifiers Formed by Si+ Ion Implantation”, Y. Irokawa, Jihyun Kim, F. Ren, K. Baik, B. Gila, C. R. Abernathy, S. J. Pearton, C.-C. Pan, G.-T. Chen, J.-I. Chyi, J. Electronic Materials 33(5), 426(2004).

 

 

17.  “Advantages and limitations of MgO as a dielectric for GaN”, B. P. Gila, J. Kim, B. Luo, A. Onstine, W. Johnson, F. Ren, C. R. Abernathy and S. J. Pearton, Solid-State Electronics, 47(12), 2139(2003).

 

 

18.  “Ferromagnetism in GaN and SiC Doped With Transition Metals”, S. J. Pearton, Y. D. Park, C. R. Abernathy, M. E. Overberg, G. T. Thaler, J. Kim, F. Ren, J. M. Zavada and R. G. Wilson, Thin Solid Films, 447, 493(2004).

 

 

19.  “On the origin of spin loss in GaMnN/InGaN light-emitting diodes”, I. A. BuyanovaM. Izadifard, and W. M. ChenJ. KimF. RenG. ThalerC. R. AbernathyS. J. PeartonC.-C. PanG.-T. ChenJ.-I. Chyi, and J. M. Zavada, Appl. Phys. Lett. 84, 2599 (2004).

 

 

20.  “MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors”, Y. IrokawaY. NakanoM. IshikoT. KachiJ. KimF. RenB. P. GilaA. H. OnstineC. R. AbernathyS. J. PeartonC.-C. PanG.-T. Chen, and J.-I. Chyi, Appl. Phys. Lett. 84, 2919 (2004).

 

 

21.  “Comparison of Interface State Density Characterization Methods for SiO[sub 2]/4H-SiC MOS Diodes “, J. R. LaRocheJ. KimJ. W. JohnsonB. LuoB. S. KangR. MehandruY. IrokawaS. J. PeartonG. Chung, and F. Ren, Electrochem. Solid-State Lett. 7, G21 (2004)

 

 

22.  “Optical and Electrical Characterization of (Ga, Mn)N/InGaN Multiquantum Well Light-Emitting Diodes”, I.A. Buyanova, M. Izadifard, L. Storasta, W. M. Chen, Jihyun Kim, F. Ren, G. Thaler, C. R. Abernathy, S. J. Pearton, C. –C. Pan, G. –T. Chen, J.-I. Chyi, and J. M. Zavada, J. of Elec. Mat., 33(5), 467(2004).

 

 

23.  “Optical study of spin injection dynamics in InGaN/GaN quantum wells with GaMnN injection layers”, I. A. Buyanova, J. P. Bergman, W.M. Chen, G. Thaler, R. Frazier, C.R. Abernathy, S.J. Pearton, Jihyun Kim, F. Ren, F.V. Kyrychenko, C.J. Stanton, C. -C. Pan, G. -T. Chen, J. -I. Chyi, and J. M. Zavada, J. of Vacuum Sci. & Technol. B 22(6), 2668(2004).

 

 

24.  “Electrical and Luminescent Properties and the Spectra of Deep Centers in GaMnN/InGaN Light Emitting Diodes”, A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, Jihyun Kim, F. Ren, G. T. Thaler, R. M. Frazier, B. P. Gila , C. R. Abernathy, S. J. Pearton, J. M. Zavada, Journal of Electronic Materials, 33(3), 241(2004).

 

 

25.  “Reversible Barrier Height Changes in Hydrogen-sensitive Pd/GaN and Pt/GaN diodes”, Jihyun Kim, F. Ren, B. P. Gila, C. R. Abernathy, S. J. Pearton, Applied Physics Letters, 82, 739(2003).

 

 

26.  “Hydrogen-sensitive GaN Schottky diodes”, Jihyun Kim, B. P. Gila, G. Y. Chung, C. R. Abernathy, S. J. Pearton, F. Ren, Solid-State Electronics, 47, 1069(2003).

 

 

27.  “Vertical and Lateral mobilities in n-(Ga, Mn)N”, Jihyun Kim, F. Ren, G. T. Thaler, R. Frazier, C. R. Abernathy, S. J. Pearton, J. M. Zavada, R. G. Wilson, Applied Physics Letters, 82, 1565(2003).

 

 

28.  “High Temperature Thermal Stability of Au/Ti/WSiX Schottky Contacts on n-Type 4H-SiC”, Jihyun Kim, F. Ren, A. G. Baca, S. J. Pearton, Solid-State Electronics, 47(8), 1345(2003).

 

29.  “Thermal Stability of WSiX and W Schottky Contacts on n-GaN”, Jihyun Kim, F. Ren, A. G. Baca, S. J. Pearton, Applied Physics Letters, 82, 3263(2003).

 

 

30.  “Comparison of Pt/GaN and Pt/4H-SiC Gas Sensors”, Jihyun Kim, B. P. Gila, C. R. Abernathy, G. Y. Chung, F. Ren, S. J. Pearton, Solid-State Electronics, 47(9), 1487(2003).

 

 

31.  “Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer”, A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, Jihyun Kim, F. Ren, G. T. Thaler, M. E. Overberg, R. Frazier, C. R. Abernathy, S. J. Pearton, C.-M. Lee, J.-I. Chyi, R. G. Wilson, J. M. Zavada, Solid-State Electronics, 47, 981(2003).

 

 

32.  “Simulation and Experimental Characteristics of 4H-SiC Schottky Power Rectifiers”, S. Nigam, Jihyun Kim, B. Luo, F. Ren, G.Y. Chung, M. F. MacMillan, J.R. Williams, S.J. Pearton, Journal of the Electrochemical Society, 150, G1(2003)

 

 

33.  “Influence of Edge Termination Geometry on Performance of 4H-SiC P-I-N Rectifiers”, S. Nigam, Jihyun Kim, B. Luo, F. Ren, G.Y. Chung, S.J. Pearton, J.R. Williams, K. Shenai, P. Neudeck, Solid-State Electronics, 47, 61(2003)

 

 

34.  “Effect of Contact Geometry on 4H-SiC Rectifiers with Junction Termination Extension”, S. Nigam, J. Kim, B. Luo, F. Ren, G.Y. Chung, S.J. Pearton, J.R. Williams, K. Shenai, P Neudeck, Solid-State Electronics, 47, 57(2003).

 

 

35.  “Thermal Simulations of High Power, Bulk GaN Rectifiers”, R. Mehandru, S. Kim, J. Kim, F. Ren, J. R. Lothian, S. J. Pearton, S. S. Park, Y. J. Park, Solid-State Electronics, 47, 1037(2003).

 

 

36.  “Current-Voltage and Reverse Recovery Characteristics of Bulk GaN p-i-n Rectifiers”, Y. Irokawa, B. Luo, Jihyun Kim, J. R. LaRoche, F. Ren, K. H. Baik, S. J. Pearton, C. -C. Pan,G. -T. Chen, J. -I. Chyi, S. S. Park, Y. J. Park, 83, Appl. Phys. Lett. 83, 2271(2003)

 

 

37.  “Influence of PECVD of SiO2 Passivation Layers on 4H-SiC Schottky Rectifiers”, S. Nigam, Jihyun Kim, F. Ren, G. Chung, M. F. MacMillan, and S. J. Pearton, Electrochemical Solid-State Letters, 6, G4(2003)

 

 

38.  “High Dose Gamma-Ray Irradiation of SiC Schottky Rectifiers”, Jihyun Kim, S. Nigam, F. Ren, D. Schoenfeld, G. Y. Chung, S. J. Pearton, Electrochemical Solid-State Letters 6(8), G105(2003).

 

 

39.  “High Three-Terminal Breakdown Voltage and Output Power of Sc2O3 Passivated AlGaN/GaN High Electron Mobility Transistors”, B. Luo, R. Mehandru, Jihyun Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, R. C. Fitch, N. Moser, D. Via and A. Crespo, Electronics Letters, 39, 809(2003).

 

 

40.  “Effect of High-Energy Proton Irradiation on DC Characteristics and Current Collapse in MgO and Sc2O3 Passivated AlGaN/GaN HEMTs”, B. Luo, Jihyun Kim, F. Ren, A. G. Baca, R. D. Briggs, B. P. Gila, A. H. Onstine, K. K. Allums, C. R. Abernathy, S. J. Pearton, R. Dwivedi, T. N. Fogarty, R. Wilkins, Electrochem. Solid-State Lett., 6,G31(2003).

 

 

41.  “160-A bulk GaN Schottky diode array”, K. H. BaikY. IrokawaJihyun KimJ. R. LaRocheF. RenS. S. ParkY. J. Park, and S. J. Pearton, Appl. Phys. Lett. 83, 3192 (2003).

 

 

42.  “Electrical Characteristics of Proton-Irradiated Sc2O3 Passivated AlGaN/GaN HEMTs”, B. Luo, Jihyun Kim, F. Ren, J. K. Gillespie, R. C. Fitch, J. Sewell, R. Dettmer, G. D. Via, A. Crespo, T. J. Jenkins, B. P. Gila, A. H. Onstine, K. K. Allums, C. R. Abernathy, S. J. Pearton, R. Dwivedi, T. N. Fogarty, R. Wilkins, Appl. Phys. Lett. 82, 1428(2003).

 

 

43. “Wide Bandgap Ferromagnetic Semiconductors and Oxides”, S.J. Pearton, C.R. Abernathy, M.E. Overberg, G.T. Thaler, D.P. Norton, N. Theodoropoulou, A.F. Hebard, Y.D. Park, F. Ren, J. Kim, L. A. Boatner, Journal of Applied Physics, 93, 1(2003)

 

 

44. “Activation kinetics of implanted Si[sup +] in GaN and application to fabricating lateral Schottky diodes”, Y. IrokawaJihyun KimF. RenK. H. BaikB. P. GilaC. R. Abernathy,S. J. PeartonC.-C. PanG.-T. Chen, and J.-I. Chyi, Appl. Phys. Lett. 83, 4987 (2003)

 

45.  “Magnesium oxide gate dielectrics grown on GaN using an electron cyclotron resonance plasma”, B. P. GilaA. H. OnstineJ. KimK. K. AllumsF. RenC. R. Abernathy, and S. J. Pearton, J. Vac. Sci. Technol. B 21, 2368 (2003).

 

46.  “Electrical and Electroluminescent Properties of GaN Light Emitting Diodes with the Contact Layer Implanted with Mn”, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, J. Kim, F. Ren, M. E. Overberg, G. T. Thaler, C. R. Abernathy, S. J. Pearton, C. –M. Lee, J. –I. Chyi, R. G. Wilson, J. M. Zavada, Solid-State Electronics, 47, 963(2003).

 

 

47.  “Improved dc and Power Performance of AlGaN/GaN High Electron Mobility Transistors with Sc2O3 Gate Dielectric or Surface Passivation”, B. Luo, R. Mehandru, Jihyun Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, R. C. Fitch, J. K. Gillespie, T. Jenkins, J. Sewell, D. Via, and A. Crespo, Solid-State Elecetronics, 47(10), 1781(2003).

 

 

48.  “AlGaN/GaN MOSHEMT Using Sc2O3 As The Gate Oxide and Surface Passivation”, R. Mehandru, B. Luo, J. Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo, Applied Physics Letters, 82, 2530(2003).

 

 

49.  “Room Temperature Ferromagnetism in GaMnN and GaMnP”, S. J. Pearton, M. E. Overberg, G. T. Thaler, C. R. Abernathy, J. Kim, F. Ren, N. Theodoropoulou, A. F. Hebard, and Y. D. Park, Phys. Stat. Sol. (a), 195, 222(2003).

 

 

50.  “Role of device area, mesa length and metal overlap distance on breakdown voltage of 4H-SiC p–i–n rectifiers”, S. Nigam, Jihyun Kim, B. Luo, F. Ren, G. Y. Chung, K. Shenai, P. G. Neudeck, S. J. Pearton and J. R. Williams, Solid-State Electronics, 47(9), 1461(2003).

 

 

51.  “GaN and Other Materials for Semiconductor Spintronics”, S. J. Pearton, Y. D. Park, C. R. Abernathy, M. E. Overberg, G. T. Thaler, Jihyun Kim, F. Ren, Journal of Electronic Materials, 32(5), 288(2003)

 

 

52. “Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors”, B. S. KangS. KimJ. KimF. RenK. BaikS. J. PeartonB. P. GilaC. R. AbernathyC.-C. PanG.-T. ChenJ.-I. ChyiV. ChandrasekaranM. SheplakT. Nishida, and S. N. G. Chu, Appl. Phys. Lett. 83, 4845 (2003).

 

 

53. “Inversion Behavior in Sc2O3/GaN Gated Diodes”, Jihyun Kim, R. Mehandru, B. Luo, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, Y. Irokawa, Applied Physics Letters, 81, 373(2002)

 

 

54.  “Charge Pumping in Sc2O3/GaN Gated MOS Diodes”, J. Kim, R. Mehandru, B. Luo, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, Y. Irokawa, Electronics Letters, 38(16), 920(2002)

 

 

55.  “New Applications for Gallium Nitride”, S. J. Pearton, C. R. Abernathy, M. E. Overberg, G. T. Thaler, A. H. Onstine, B. P. Gila, F. Ren, B. Luo, J. Kim, Materialstoday, June 24(2002)

 

 

56.  “Characteristics of MgO/GaN Gate-Controlled Metal-Oxide-Semiconductor Diodes”, Jihyun Kim, R. Mehandru, B. Luo, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, Y. Irokawa, Applied Physics Letters, 80, 4555(2002)

 

 

57.  “High Energy Proton Irradiation of MgO/GaN Metal Oxide Semiconductor Diodes”, Jihyun Kim, B. P. Gila, R. Mehandru, B. Luo, A. H. Onstine, C. R. Abernathy, F. Ren, K. K. Allums, R. Dwivedi, T. N. Forgarty, R. Wilkins, Y. Irokawa, S. J. Pearton, Electrochemical and Solid-State Letters 5,G57(2002)

 

 

58.  “Optical Absorption and Temperature-dependent Resistivity of GaMnN Grown by Molecular Beam Epitaxy”, Jihyun Kim, F. Ren, A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, N. Y. Pashova, G. T. Thaler, M. E. Overberg, C. R. Abernathy, S. J. Pearton, Electrochemical and Solid-State Letters, 5(11), G103(2002)

 

 

59.  “Band Line-up and Mechanisms of Current Flow in n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction”, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, B. Luo,J. Kim, R. Mehandru, F. Ren, K. P. Lee, S. J. Pearton, A. V. Osinsky, P. E. Norris, Applied Physics Letters, 80, 3352(2002)

 

 

60.  “Influence of MgO and Sc2O3 Passivation on AlGaN/GaN High-electron-mobility Transistors”, B. Luo, J. W. Johnson, J. Kim, R. Mehandru, F. Ren, B. P. Gila, A. H. Onstine, C. R. Aberanthy, S. J. Pearton, A. G. Baca, R. D. Briggs, R. J. Shul, C. Monier, J. Han, Applied Physics Letters, 80, 1661(2002)

 

 

61.    “Electrical Characterization of GaN Metal Oxide Semiconductor Diode Using Sc2O3 as the Gate Oxide”, R. Mehandru, B. P. Gila, J. Kim, J. W. Johnson, K. P. Lee, B. Luo, A. H. Onstine, C. R. Abernathy, S. J. Pearton, F. Ren, Electrochemical and Solid-State Letters 5, G51 (2002)

 

 

62.  “Magnetic properties of n-GaMnN thin films”, G. T. Thaler, M. E. Overberg, B. Gila, R. Frazier, C. R. Abernathy, S. J. Pearton, J. S. Lee, S. Y. Lee, Y. D. Park, Z. G. Khim, J. Kim, F. Ren, Applied Physics Letters, 80, 3964(2002)

 

 

63.  “Enhanced Tunneling in GaN/InGaN Multi-quantum-well Heterojunction Diodes After Short-term Injection Annealing”, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, J. Kim, B. Luo, R. Mehandru, F. Ren, K. P. Lee ,S. J. Pearton, A. V. Osinsky, P. E. Norris, Journal of Applied Physics, 91, 5203(2002)

 

 

64.  “Electrical characteristics of p-GaN schottky rectifiers after PECVD SiNx passivation”, K. H. Baik, B. Luo, J. Kim, S. J. Pearton and F. Ren, Solid-State Electronics, 46, 1459(2002)

 

 

65.  “Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions”, B. Lou, J. Kim, R. Mehandru, F. Ren, K. P. Lee, S. J. Pearton, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, Solid-State Electronics, 46, 1345(2002)

 

 

66.  “Effect of Sc2O3 and MgO Passivation Layers on the Output Power of AlGaN/GaN HEMTs”, J. K. Gillespie, R. C. Fitch, J. Sewell, R. Dettmer, G. D. Via, A. Crespo, T. J. Jenkins, B. Luo, R. Mehandru, J. Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, IEEE Electron Device Letters, 23(9), 505(2002)

 

 

67.  “Recent advances in gate dielectrics and polarized light emission from GaN”, S. J. Pearton, C. R. Abernathy, B. P. Gila, A. H. Onstine, M. E. Overberg, G. T. Thaler, Jihyun Kim, B. Luo, R. Mehandru, F. Ren, Y. D. Park, Opto-Electronics Review 10(4), 231(2002).

 

 

68.  “Comparison of Stabiltiy of WSiX/SiC and Ni/SiC Schottky Rectifiers to High Dose Gamma-ray Irradiation”, Jihyun Kim, F. Ren, G. Y. Chung, M. F. MacMillan, A. G. Baca, R. D. Briggs, D. Scheonfeld, S. J. Pearton, Appl. Phys. Lett. 84, 371(2004).

 

 

69.  “Electrical and Optical properties of GaN films implanted with Mn and Co”, A. Y. Polyakov, N.B. Smirnov, A.V. Govorkov, N.Y. Pashkova, J. Kim, F. Ren, M.E. Overberg, G.T. Thaler, C.R. Abernathy, S. J. Pearton, R. G. Wilson, Journal of Applied Physics, 92, 3130(2002)

 

 

70.  “Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors”, B. Luo, R. Mehandru, J. Kim, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo, Y. Irokawa, Journal of the Electrochemical Society, 149(11), G613(2002).

 

 

71.  “Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO as the Gate Oxide”, Jihyun Kim, B. Gila, R. Mehandru, J. W. Johnson, J. H. Shin, K. P. Lee, B. Luo, A. Onstine, C. R. Abernathy, S. J. Pearton, F. Ren, Journal of the Electrochemical Society, 149(8), G482(2002).

 

 

72.  “The role of cleaning conditions and epitaxial layer structure on reliability of Sc2O3 and MgO passivation on AlGaN/GaN HEMTS”, B. Luo, R. M. Mehandru, Jihyun Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, R. C. Fitch, J. Gillespie, R. Dellmer, T. Jenkins, J. Sewell, D. Via and A. Crespo, Solid-State Electronics, 46, 2185(2002)

 

 

73.  “Optical and Electrical Properties of GaMnN Films Grown by Molecular Beam Epitaxy”, A.Y. Polyakov, A.V. Govorkov, N.B. Smirnov, N.Y. Pashkova, G. T. Thaler, M. E. Overberg, R. Frazier, C. R. Abernathy, S. J. Pearton, Jihyun Kim, F. Ren, Journal of Applied Physics, 92, 4989(2002)

 

 

74.  “High Energy Proton Irradiation Effects on SiC Schottky Rectifiers”, S. Nigam, Jihyun Kim, F. Ren, G.Y. Chung and M.F. MacMillan, R. Dwivedi, T.N. Fogarty, R. Wilkins, K.K. Allums, C.R. Abernathy, S.J. Pearton, J.R. Williams, Applied Physics Letters, 81(13), 2385(2002)

 

 

75.   “Pt Schottky contacts to n-(Ga,Mn)N”, Jihyun Kim, F. Ren, G. T. Thaler, M. E. Overberg, C. R. Abernathy, S. J. Pearton, R. G. Wilson, Applied Physics Letters 81, 658(2002).